1~40 GHz硅基射频微系统无源互连结构PDK设计与验证

Design and Verification of A 1~40 GHz Silicon-Based RF Microsystem Passive Interconnect PDK

摘要:

随着5G通信和毫米波技术的快速发展，射频微系统对高频无源互连结构的性能需求日益提升。针对传统设计流程中工艺数据分散、模型孤立导致的效率瓶颈，本文提出了一种1~40 GHz硅基无源互连结构工艺设计包（PDK）的自主开发方案。基于等效电路模型与HFSS全波仿真数据融合校准方法，构建了接地共面波导（GCPW）、微凸点等核心结构的参数化模型，并通过梯度优化算法实现模型的高精度匹配。在Keysight ADS平台上完成了PDK开发，包含符号库、参数化单元、设计规则及验证流程。实验结果表明：所开发的PDK在1~40 GHz频段内S参数均方根误差低于10%。基于此PDK，完成了X频段射频微系统仿真设计，微系统满足指标要求，验证了PDK的有效性。该PDK为高频射频系统的高效设计与工艺协同提供了可靠支撑。

Abstract:

With the rapid development of 5G communication and millimeter-wave technology, the performance requirements for high-frequency passive interconnect structures in radio frequency (RF) microsystems have become increasingly critical. To address the efficiency bottlenecks caused by fragmented process data and isolated models in traditional design workflows, this paper proposed an independently developed 1~40 GHz silicon-based passive interconnect Process Design Kit (PDK). By integrating equivalent circuit models with HFSS full-wave electromagnetic simulation data, parameterized models for core structures such as grounded coplanar waveguide (GCPW) and micro-bump interconnects are established, and high-precision model matching is achieved through gradient optimization algorithms. The PDK development is completed on the Keysight ADS platform, including symbol libraries, parameterized cells, design rules, and verification workflows. Experimental results demonstrate that the developed PDK achieves a root mean square error (RMSE) of S-parameters below 10% across the 1~40 GHz frequency band. Based on this PDK, the simulation design of an X-band RF micro system was completed. The microsystem meets the specified performance requirements, verities the validity of the PDK. This PDK provides for reliable support for efficient design-process co-optimization in high-frequency RF systems.