用于PolyStrata技术的光刻工艺探索研究

Research on lightgraph technology for PolyStrata technology

摘要:

在高集成的射频微机电系统RF MEMS（Radio Frequency Micro Electro Mechanical System）器件的发展趋势下，三维集成工艺的研究越来越多。基于PolyStrata技术的三维多层堆叠同轴器件以其无色散、低损耗、超宽带的优势脱颖而出，PolyStrata技术使用紫外厚胶作为牺牲材料，对光刻胶粘附性、精度、工艺兼容及释放性能要求高，常规厚胶难以满足。探索A、B两种紫外光刻厚胶，对两者工艺参数及图形质量进行对比研究。结果表明，光刻胶A厚度均匀性为98.6%，图形偏差小于10μm；光刻胶B图形偏差小于5μm，但均匀性较差，约80.4%。

Abstract:

With the development of highly integrated RF MEMS devices, there are more and more researches on 3D (Three Dimensional) integration technology. The 3D multi-layer stacking coaxial devices based on PolyStrata technology stand out for its advantages of dispersionless, low loss and ultra-wiband. PolyStrata technology uses ultraviolet thick adhesive as sacrificial material, which has high requirements on photoresist adhesion, precision, process compatibility and release performance, and conventional thick adhesive is difficult to achieve. In this paper, two kinds of UV lithography thick adhesives, A and B, are explored, and their process parameters and graphic quality are compared. The experimental results show that the thickness uniformity of photoresist A is 98.6%, and the graphic deviation is less than 10 μm. The deviation of photoresist B is less than 5 μm, but with poor uniformity, about 80.4%.